The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...
The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...
The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...
The invention relates to a process of forming a phase-change memory device. The process includes forming a salicide structure in peripheral logic portion of the substrate and preventing forming salicide structures in the memory array. The device may include a double-wide trench into which a single f ...