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Xikun Wang, Jie Liu, Anchuan Wang, Nitin K Ingle, Jeffrey W Anthis, Benjamin Schmiege: Oxide and metal removal. Applied Materials, Kilpatrick Townsend & Stockton, April 12, 2016: US09309598 (50 worldwide citation)

Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is del ...


2
OXIDE AND METAL REMOVAL. December 3, 2015: US20150345028-A1

Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is del ...


3
OXIDE AND METAL REMOVAL. Applied Materials, August 4, 2016: US20160222522-A1

Methods are described herein for etching metal films which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is del ...