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Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato: Nonvolatile semiconductor memory device and manufacturing method thereof. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, May 3, 2011: US07936004 (159 worldwide citation)

A nonvolatile semiconductor memory device includes a plurality of the memory strings, in which a plurality of electrically programmable memory cells is connected in series. The memory strings comprise a pillar shaped semiconductor; a first insulation film formed around the pillar shaped semiconducto ...


2
Soo Cheol Lee: Nonvolatile semiconductor memory device and manufacturing method thereof. Samsung Electronics, Cushman Darby & Cushman, August 20, 1991: US05041886 (94 worldwide citation)

A nonvolatile semiconductor memory device is provided including a doped semiconductor substrate and three gate conductor layers electrically insulated from each other in the cell area on the substrate. A first floating gate conductor layer is formed on the substrate and covered by a second control g ...


3
Seong soo Lee, Jae seung Hwang: Nonvolatile semiconductor memory device and manufacturing method thereof. Samsung Electronics, Mills & Onello, November 19, 2002: US06483146 (57 worldwide citation)

A floating gate electrode configuration and process reduces a space critical dimension between adjacent floating gate electrodes while reducing the consumption of a device isolation layer during etching of a dielectric layer overlying the floating gate electrode. The end portions of the floating gat ...


4
Tetsuya Kakehata, Tetsuhiro Tanaka, Yoshinobu Asami: Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film. Semiconductor Energy Laboratory, Nixon Peabody, Jeffrey L Costellia, June 7, 2011: US07955995 (40 worldwide citation)

An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insula ...


5
Masaru Kidoh, Ryota Katsumata, Hiroyasu Tanaka, Hideaki Aochi, Masaru Kito: Nonvolatile semiconductor memory device and manufacturing method thereof. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, October 2, 2012: US08278695 (38 worldwide citation)

A nonvolatile semiconductor memory device includes a substrate, and a plurality of memory strings, the memory string including a first selection transistor including a first pillar shaped semiconductor formed perpendicular to the substrate, a first gate insulating film formed around the first pillar ...


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Yoshitaka Sasago, Takashi Kobayashi: Nonvolatile semiconductor memory device and manufacturing method thereof. Hitachi, Miles & Stockbridge P C, December 30, 2003: US06670671 (37 worldwide citation)

In a channel region between the source/drain diffusion layers, impurities of the same conductivity type as the well are doped in an area apart from the diffusion regions. By using as a mask the gate formed in advance, tilted ion implantation in opposite directions is performed to form the diffusion ...


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Fukuzumi Yoshiaki, Aochi Hideaki, Katsumata Ryuta, Kito Takashi, Kito Masaru, Tanaka Hiroyasu, Matsuoka Yasuyuki: Nonvolatile semiconductor memory device and manufacturing method thereof. Toshiba, June 18, 2009: JP2009-135324 (23 worldwide citation)

PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile semiconductor memory device which is highly integrated, and also to provide a manufacturing method thereof.SOLUTION: The nonvolatile semiconductor memory device has a plurality of memory strings each having a plurality of electrically rewri ...


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Toshiyuki Mine, Natsuki Yokoyama, Kan Yasui: Nonvolatile semiconductor memory device and manufacturing method thereof. Renesas Technology, Reed Smith, Stanley P Fisher Esq, Juan Carlos A Marquez Esq, October 3, 2006: US07115943 (22 worldwide citation)

A MONOS nonvolatile memory of a split gate structure, wherein writing and erasing are performed by hot electrons and hot holes respectively, is prone to cause electrons not to be erased and to remain in an Si nitride film on a select gate electrode sidewall and that results in the deterioration of r ...


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Masaru Kito, Hideaki Aochi, Ryota Katsumata, Akihiro Nitayama, Masaru Kidoh, Hiroyasu Tanaka, Yoshiaki Fukuzumi, Yasuyuki Matsuoka, Mitsuru Sato: Nonvolatile semiconductor memory device and manufacturing method thereof. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, June 23, 2015: US09064735 (12 worldwide citation)

A nonvolatile semiconductor memory device that has a new structure is provided, in which memory cells are laminated in a three dimensional state so that the chip area may be reduced. The nonvolatile semiconductor memory device has a plurality of memory strings, in which a plurality of electrically p ...


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Takeshi Kamigaichi, Hirofumi Inoue: Nonvolatile semiconductor memory device and manufacturing method thereof. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, September 21, 2010: US07800091 (12 worldwide citation)

A nonvolatile semiconductor memory device includes a first stacked structure in which a plurality of electrode layers are stacked on a substrate via insulating layers, a first resistance changing layer provided on a side surface of the first stacked structure and in contact with the first electrode ...