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Yigal Brandman, Kevin M Conley: Nonvolatile memory with variable read threshold. SanDisk Corporation, Weaver Austin Villeneuve Sampson, July 7, 2009: US07558109 (198 worldwide citation)

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mappe ...


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Brandman Yigal, Conley Kevin M: Nonvolatile memory with variable read threshold. Sandisk Corporation, Brandman Yigal, Conley Kevin M, GALLAGHER Peter A, May 15, 2008: WO/2008/057822 (6 worldwide citation)

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mappe ...


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Yigal Brandman, Kevin M Conley: Nonvolatile Memory With Variable Read Threshold. Winston & Strawn, May 29, 2008: US20080123420-A1

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mappe ...


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Brandman Yigal, Conley Kevin M: Nonvolatile memory with variable read threshold. Sandisk, Liu Guowei, November 4, 2009: CN200780041032

Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mappe ...


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