1
Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Corporation, Banner & Witcoff, November 4, 2003: US06643188 (302 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


2
Tanaka Tomoharu, Chen Jian: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Tokyo Shibaura Electric Co, Sandisk, July 2, 2003: EP1324343-A2 (12 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell (M), and a write circuit (2 to 8) for writing data in the memory cell, the write circuit writing a data in the memory cells, the writing a data in the memory cell by supplying a ...


3
Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Corporation, Banner & Witcoff, December 10, 2013: US08605511 (10 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


4
Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, Banner & Witcoff, July 29, 2008: US07405970 (10 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


5
Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, Banner & Witcoff, January 4, 2011: US07864591 (7 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, Banner & Witcoff, March 2, 2010: US07672168 (7 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Corporation, Banner & Witcoff, January 6, 2015: US08929135 (4 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, Sandisk Corporation, Banner & Witcoff, June 26, 2012: US08208311 (1 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, Banner & Witcoff, August 7, 2003: US20030147278-A1 (1 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


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Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Technologies, Banner & Witcoff, August 15, 2017: US09734899

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...