1
Wagdi W Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-Continuous encapsulation layer for MIM capacitor. International Busniess Machines Corporation, Anthony J Canale, July 5, 2005: US06913965 (2 worldwide citation)

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


2
Wagdi Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-continuous encapsulation layer for MIM capacitor. International Business Machines Corporation, Anthony J Canale, February 5, 2008: US07326987 (1 worldwide citation)

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


3
Wagdi W Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara A Waterhouse, Michael Zierak: Non-continuous encapsulation layer for mim capacitor. International Business Machines Corporation, Ibm Microelectronics, September 1, 2005: US20050189615-A1

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...


4
Wagdi William Abadeer, Eric Adler, Zhong Xiang He, Bradley Orner, Vidhya Ramachandran, Barbara Ann Waterhouse, Michael Zierak: Non-continuous encapsulation layer for mim capacitor. Intrenational Business Machines Corporation, Ibm Microelectronics, December 16, 2004: US20040251514-A1

The present invention relates to metal-insulator-metal (MIM) capacitors and field effect transistors (FETs) formed on a semiconductor substrate. The FETs are formed in Front End of Line (FEOL) levels below the MIM capacitors which are formed in upper Back End of Line (BEOL) levels. An insulator laye ...