1
YANG Jianhua, GILBERTO Ribeiro, WILLIAMS R Stanley: Dispositifs de commutation nanométriques aux électrodes partiellement oxydées, Nanoscale switching devices with partially oxidized electrodes. Hewlett Packard Development Company, YANG Jianhua, GILBERTO Ribeiro, WILLIAMS R Stanley, COLLINS David W, October 27, 2011: WO/2011/133138 (27 worldwide citation)

A nanoscale switching device (200) is provided. The device comprises: a first electrode (110) of a nanoscale width; a second electrode (120) of a nanos-cale width; an active region (122) disposed between the first and second elec-trodes, the active region having a non-conducting portion (122a) compr ...


2
Duncan Stewart, Douglas Ohlberg, R Stanley Williams, Philip J Kuekes: Control layer for a nanoscale electronic switching device. Hewlett Packard Development Company, June 22, 2010: US07741638 (5 worldwide citation)

A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least on ...


3
Gilberto Ribeiro, Janice H Nickel, Jianhua Yang: Nanoscale switching device. Hewlett Packard Development Company, Hewlett Packard Patent Department, May 26, 2015: US09040948 (4 worldwide citation)

A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow ...


4
Qiangfei Xia, Jianhua Yang, Shih Yuan Wang: Memristor amorphous metal alloy electrodes. Hewlett Packard Development Company, November 22, 2011: US08063395 (2 worldwide citation)

A nanoscale switching device comprises at least two electrodes, each of a nanoscale width; and an active region disposed between and in electrical contact with the electrodes, the active region containing a switching material capable of carrying a species of dopants and transporting the dopants unde ...


5
Jianhua Yang, Wei Yi, Michael Josef Stuke, Shih Yuan Wang: Memristors with an electrode metal reservoir for dopants. Hewlett Packard Development Company, David W Collins, December 4, 2012: US08325507 (1 worldwide citation)

A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conduc ...


6
Jianhua Yang, Shih Yuan Wang, R Stanley Williams, Alexandre Bratkovski, Gilberto Ribeiro: Electroforming-free nanoscale switching device. Hewlett Packard Development Company, August 27, 2013: US08519372 (1 worldwide citation)

A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching m ...


7
Stewart Duncan, Ohlberg Douglas A, Williams Stanley R, Kuekes Philip J: Control layer for a nanoscale electronic switching device. Hewlett Packard Development Company, Stewart Duncan, Ohlberg Douglas A, Williams Stanley R, Kuekes Philip J, COLLINS David W, May 8, 2008: WO/2008/054400 (1 worldwide citation)

A control layer (26, 26', 28, 28', 28') for use in a junction of a nanoscale electronic switching device (10) is disclosed. The control layer (26, 26', 28, 28', 28') includes a material that is chemically compatible with a connecting layer (16) and at least one electrode (12, 14) in the nanoscale sw ...


8
Jianhua Yang, Gilberto Ribeiro, R Stanley Williams: Nanoscale switching devices with partially oxidized electrodes. Hewlett Packard Development Company, Hewlett Packard Patent Department, May 5, 2015: US09024285

A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semicondu ...


9
Jianhua Yang, Dmitri Strukov, Wei Wu: Nanoscale switching device. Hewlett Packard Development Company, Hewlett Packard Patent Department, November 10, 2015: US09184213

A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between ...


10
Jianhua Yang, Matthew Pickett, Gilberto Ribeiro: Nanoscale switching device. Hewlett Packard Development Company, Van Cott Bagley Cornwall & McCarthy, Steven L Nichols, December 16, 2014: US08912520

A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the devi ...