1
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. Sundisk Corporation, Majestic Parsons Siebert & Hsue, December 15, 1992: US05172338 (1028 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable non-volatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading ...


2
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, April 24, 2001: US06222762 (945 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


3
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. SunDisk Corporation, Majestic Parsons Siebert & Hsue, November 10, 1992: US05163021 (362 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable nonvolatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading i ...


4
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Three-dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Edwards, November 3, 1998: US05831276 (256 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


5
Fernando Gonzalez, Ray Turi: Stack/trench diode for use with a muti-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Edwards, November 24, 1998: US05841150 (239 worldwide citation)

The invention provides a vertically oriented diode for use in delivering large amounts of current to a variable resistance element in a multi-state memory cell. The vertical diode is disposed in a diode container extending downwardly from the top of a tall oxide stack into a deep trench in single cr ...


6
Fernando Gonzalez, Raymond A Turi, Graham R Wolstenholme, Charles L Ingalls: Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell. Micron Technology, Fletcher Yoder & Van Someren, November 16, 1999: US05985698 (217 worldwide citation)

A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed pr ...


7
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, November 13, 2001: US06317364 (189 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


8
Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. Sandisk Corporation, Vierra Magen Marcus & DeNiro, June 26, 2007: US07237074 (155 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


9
Yan Li: Data recovery methods in multi-state memory after program fail. SanDisk Corporation, Davis Wright Tremaine, March 18, 2008: US07345928 (151 worldwide citation)

A non-volatile memory device includes the ability to recover data in event of a program failure without having to maintain a copy of the data until the write is completed. As the integrity of the data can thus be maintained with having to save a copy, buffers can be freed up for other data or even e ...


10
Shahzad B Khalid, Daniel C Guterman, Geoffrey S Gongwer, Richard Simko, Kevin M Conley: Writable tracking cells. SanDisk Corporation, Skjerven Morrill, March 25, 2003: US06538922 (148 worldwide citation)

The present invention presents several techniques for using writable tracking cells. Multiple tracking cells are provided for each write block of the memory. These cells are re-programmed each time the user cells of the associated write block are written, preferably at the same time, using the same ...