1
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann, Richard Ferrant: MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations. Qimonda, ALTIS Semiconductor SNC, November 13, 2012: US08310866 (4 worldwide citation)

A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb ...


2
Rainer Leuschner, Ulrich Klostermann, Richard Ferrant: MRAM Device Structure Employing Thermally-Assisted Write Operations and Thermally-Unassisted Self-Referencing Operations. Slater & Matsil, January 7, 2010: US20100002501-A1

A thermally-assisted MRAM structure which is programmable at a writing mode operating temperature is presented and includes an anti-ferromagnet, an artificial anti-ferromagnet, a barrier layer, and a free magnetic layer. The anti-ferromagnet is composed of a material having a blocking temperature Tb ...



Click the thumbnails below to visualize the patent trend.