1
Thomas E Grebs, Nathan Lawrence Kraft, Rodney Ridley: Methods for forming shielded gate field effect transistors. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, January 13, 2009: US07476589 (37 worldwide citation)

A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode i ...


2
Grebs Thomas E, Ridley Rodney S, Kraft Nathan Lawrence, Dolny Gary M, Yedinak Joseph A, Kocon Christopher Boguslaw, Challa Ashok B: Structures and methods for forming shielded gate field effect transistors. Fairchild Semiconductor Corporation, Grebs Thomas E, Ridley Rodney S, Kraft Nathan Lawrence, Dolny Gary M, Yedinak Joseph A, Kocon Christopher Boguslaw, Challa Ashok B, SANI Barmak, January 4, 2007: WO/2007/002857 (15 worldwide citation)

A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode i ...


3
Grebs Thomas E, Ridley Rodney S, Kraft Nathan Lawrence, Dolny Gary M, Yedinak Joseph A, Kocon Christopher Boguslaw, Challa Ashok B: Structures and methods for forming shielded gate field effect transistors. Fairchild Semiconductor, Zhang Shegao, Wu Guimeng, November 11, 2009: CN200680023940

A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode i ...


4
Thomas E Grebs, Nathan Lawrence Kraft, Rodney Ridley, Gary M Dolny, Joseph A Yedinak, Christopher Boguslaw Kocon, Ashok Challa: Structures and methods for forming shielded gate field effect transistors. Townsend And Townsend And Crew, February 8, 2007: US20070032020-A1

A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode i ...


5
Grebs Thomas E, Ridley Rodney S, Kraft Nathan Lawrence, Dolny Gary M, Yedinak Joseph A, Kocon Christopher Boguslaw, Challa Ashok B: Structures and methods for forming shielded gate field effect transistors. Fairchild Semiconductor Corporation, March 28, 2008: KR1020087002372

A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode i ...


6

7