1
Kangguo Cheng, Jack Allan Mandelman: Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods. International Business Machines Corporation, Wood Herron & Evans, October 12, 2010: US07811881 (79 worldwide citation)

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried ...


2
Cheng Kangguo, Mandelman Jack A: Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods. Ibm, zhanggao, May 23, 2007: CN200610142854

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried ...


3
Kangguo Cheng, Jack Allan Mandelman: Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods. International Business Machines Corporation, James R Nock, IBM Corporation Dept 917, May 3, 2007: US20070099391-A1

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried ...


4
Kangguo Cheng, Jack Allan Mandelman: Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods. International Business Machines Corporation, Wood Herron & Evans, September 11, 2008: US20080220586-A1

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried ...


5
Kangguo Cheng, Jack Allan Mandelman: Methods for forming semiconductor structures with buried isolation collars and semiconductor structures formed by these methods. International Business Machines Corporation, Wood Herron & Evans, September 11, 2008: US20080217671-A1

A semiconductor structure including a trench formed in a substrate and a buried isolation collar that extends about sidewalls of the trench. The buried isolation collar is constituted by an insulator formed from a buried porous region of substrate material. The porous region is formed from a buried ...



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