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David A Kaisaki, Heather K Kranz, Thomas E Wood, L Charles Hardy: Method of planarizing the upper surface of a semiconductor wafer. 3M Innovative Properties Company, Daniel R Pastirik, Colene H Blank, February 27, 2001: US06194317 (114 worldwide citation)

This invention pertains to a method of modifying or refining a surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of a second material deployed over at least one discrete feature of a first mat ...


2
Kaisaki David A, Kranz Heather K, Wood Thomas E, Hardy L Charles: Method of planarizing the upper surface of a semiconductor wafer. Minnesota Mining And Manufacturing Company, Kaisaki David A, Kranz Heather K, Wood Thomas E, Hardy L Charles, FEULNER Gregory J, November 5, 1998: WO/1998/049723 (2 worldwide citation)

This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first mat ...


3
Kaisaki David A, Kranz Heather K, Wood Thomas E, Hardy L Charles: Procede de planage de la surface superieure dune plaquette de semi-conducteur, Method of planarizing the upper surface of a semiconductor wafer. Minnesota Mining And Manufacturing Company, Minnesota Mining And Manufacturing Company, SMART & BIGGAR, November 5, 1998: CA2287404

This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first mat ...


4
Kaisaki David A, Kranz Heather K, Wood Thomas E, Hardy L Charles: Method of planarizing the upper surface of a semiconductor wafer. Minnesota Mining & Mfg, July 5, 2000: EP1016133-A1

This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first mat ...


5
Kaisaki David A, Kranz Heather K, Wood Thomas E, Hardy L Charles: Method of planarizing the upper surface of a semiconductor wafer. Minnesota Mining And Manufacturing Company, March 15, 2001: KR1019997010006

This invention pertains to a method of modifying or refining the surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of second material deployed over at least one discrete feature of a first mat ...


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