1
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional NAND memory. SanDisk 3D, Foley & Lardner, August 18, 2009: US07575973 (261 worldwide citation)

A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell, and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor ac ...


2
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional NAND memory. Sandisk 3D, Foley & Lardner, April 7, 2009: US07514321 (170 worldwide citation)

A method of making a monolithic, three dimensional NAND string, includes forming a semiconductor active region of a first memory cell over a semiconductor active region of a second memory cell. The semiconductor active region of the first memory cell is a first pillar having a square or rectangular ...


3
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional NAND memory. Sandisk 3D, Foley & Lardner, June 29, 2010: US07745265 (168 worldwide citation)

A method of making a monolithic, three dimensional NAND string, includes forming a select transistor, forming a first memory cell over a second memory cell, forming a first word line for the first memory cell, forming a second word line for the second memory cell, forming a bit line, forming a sourc ...


4
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional NAND memory. SanDisk 3D, The Marbury Law Group PLLC, October 5, 2010: US07808038 (168 worldwide citation)

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is a first pillar having a square or rectangular cross section when viewed from above, the first pillar being a first conductivity type s ...


5
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional nand memory. SanDisk 3D, Foley And Lardner, October 2, 2008: US20080242028-A1

A method of making a monolithic, three dimensional NAND string including a first memory cell located over a second memory cell, includes growing a semiconductor active region of second memory cell, and epitaxially growing a semiconductor active region of the first memory cell on the semiconductor ac ...


6
Nima MOKHLESI, Roy SCHEUERLEIN: Method of making three dimensional nand memory. SanDisk 3D, Foley And Lardner, October 2, 2008: US20080242034-A1

A method of making a monolithic, three dimensional NAND string, includes forming a semiconductor active region of a first memory cell over a semiconductor active region of a second memory cell. The semiconductor active region of the first memory cell is a first pillar having a square or rectangular ...


7
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional nand memory. SanDisk 3D, Foley And Lardner, October 2, 2008: US20080237698-A1

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is a first pillar having a square or rectangular cross section when viewed from above, the first pillar being a first conductivity type s ...


8
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional nand memory. SanDisk 3D, Foley And Lardner, October 2, 2008: US20080242008-A1

A method of making a monolithic, three dimensional NAND string, includes forming a select transistor, forming a first memory cell over a second memory cell, forming a first word line for the first memory cell, forming a second word line for the second memory cell, forming a bit line, forming a sourc ...