1
Jungmin Ko: Method of fin patterning. Applied Materials, Kilpatrick Townsend & Stockton, March 22, 2016: US09293568 (54 worldwide citation)

Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may ...


2
METHOD OF FIN PATTERNING. Applied Materials, July 30, 2015: US20150214337-A1

Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may ...