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Charles G Woychik, Cyprian Emeka Uzoh, Michael Newman, Terrence Caskey: Method of fabricating low CTE interposer without TSV structure. Invensas Corporation, Lerner David Littenberg Krumholz & Mentlik, January 31, 2017: US09558964

A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the die ...


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METHOD OF FABRICATING LOW CTE INTERPOSER WITHOUT TSV STRUCTURE. February 12, 2015: US20150044820-A1

A microelectronic assembly including a dielectric region, a plurality of electrically conductive elements, an encapsulant, and a microelectronic element are provided. The encapsulant may have a coefficient of thermal expansion (CTE) no greater than twice a CTE associated with at least one of the die ...