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Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Sandisk Corporation, Vierra Magen Marcus & DeNiro, November 27, 2007: US07301817 (108 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. SanDisk Corporation, Vierra Magen Marcus & DeNiro, February 17, 2009: US07492634 (13 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Li Yan, Pham Long: Method for programming of multi-state non-volatile memory using smart verify. Sandisk Corporation, Li Yan, Pham Long, MAGEN Burt, May 3, 2007: WO/2007/050976 (1 worldwide citation)

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Li Yan, Pham Long: Method for programming of multi-state non-volatile memory using smart verify. Sandisk, liu guowei, February 11, 2009: CN200680039975

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Li Yan, Pham Long: Method for programming of multi-state non-volatile memory using smart verify. Sandisk, July 23, 2008: EP1946323-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Vierra Magen Sandisk Corporation, May 3, 2007: US20070097749-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Yan Li, Long Pham: Method for programming of multi-state non-volatile memory using smart verify. Vierra Magen Sandisk Corporation, January 17, 2008: US20080013374-A1

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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Li Yan, Pham Long: Method for programming of multi-state non-volatile memory using smart verify. Sandisk Corporation, October 6, 2008: KR1020087012605

In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non volatile storage elements are programmed based on a lower page of data to have a voltage threshold (VTH) that falls within a first VTH distribution or a high ...


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