1
Fu Kai Tsai, Yung Feng Lin: Method for programming a multilevel memory. Macronix International, Birch Stewart Kolasch & Birch, November 4, 2008: US07447068 (98 worldwide citation)

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted ...


2
Hsin Yi Ho, Nian Kai Zous, I Jen Huang, Yung Feng Lin: Method for programming a multilevel memory. Macronix International, Birch Stewart Kolasch & Birch, June 14, 2011: US07961513 (3 worldwide citation)

A method for programming a MLC memory includes (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted programmed state into programmed bits by using a Vd bias BL; (b) ending this method if each bit of the memory has a Vt level not lower than the PV level of th ...


3
Hsin Yi Ho, Nian Kai Zous, I Jen Huang, Yung Feng Lin: Method for programming a multilevel memory. Macronix International, Birch Stewart Kolasch & Birch, August 25, 2009: US07580292 (1 worldwide citation)

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method includes (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted progr ...


4
Confalonieri Emanuele, Del Gatto Nicola, Lisi Carlo, Ferrario Marco: Programming method of multilevel memories and corresponding circuit. St Microelectronics, May 3, 2006: EP1653474-A1

The present invention relates to a method for programming a multilevel memory of the flash EEPROM type comprising a matrix of cells grouped in memory words. Advantageously according to the invention the method provides the simultaneous generation of a first programming voltage value (V PROG ) and a ...


5
Fu Kai Tsai, Yung Feng Lin: Method for programming a multilevel memory. Macronix International, Birch Stewart Kolasch & Birch, September 25, 2008: US20080232164-A1

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises programming the bits of the memory having a Vt level lower than the first PV level of the targeted ...


6
Hsin Yi Ho, Nian Kai Zous, I Jen Huang, Yung Feng Lin: Method for programming a multilevel memory. Macronix International, Birch Stewart Kolasch & Birch, December 18, 2008: US20080310223-A1

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted prog ...


7
Hsin Yi Ho, Nian Kai Zous, I Jen Huang, Yung Feng Lin: Method for programming a multilevel memory. Birch Stewart Kolasch & Birch, December 10, 2009: US20090303792-A1

A method for programming a MLC memory is provided. The MLC memory has a number of bits, and each bit has a number of programmed states. Each programmed state has a first PV level. The method comprises (a) programming the bits of the memory having a Vt level lower than the PV level of a targeted prog ...