1
Mitsutoshi Miyasaka: Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and method for fabricating solar cells and active matrix liquid crystal devices. Seiko Epson Corporation, Oliff & Berridge, May 23, 2000: US06066516 (82 worldwide citation)

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perfo ...


2
Mitsutoshi Miyasaka: Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices. Seiko Epson Corporation, Oliff & Berridge, September 24, 2002: US06455360 (35 worldwide citation)

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perfo ...


3
Mitsutoshi Miyasaka: Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices. Seiko Epson Corporation, Oliff & Berridge, June 8, 2004: US06746903 (9 worldwide citation)

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perfo ...


4
Mitsutoshi Miyasaka: Method for forming crystalline semiconductor layers, a method for fabricating thin film transistors, and a method for fabricating solar cells and active matrix liquid crystal devices. Seiko Epson Corporation, Oliff & Berridge, October 10, 2002: US20020146868-A1 (1 worldwide citation)

A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perfo ...