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Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Pƶlzl, Heimo Hofer: Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration. Infineon Technologies, Laurence A Grenberg, Werner H Stemer, Gregory L Mayback, February 28, 2006: US07005351 (62 worldwide citation)

A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in eac ...


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Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Polzl, Heimo Hofer: Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration. Lerner And Greenberg Pa, February 19, 2004: US20040031987-A1

A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in eac ...