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Bahman Qawami
Mei Yan, Robert C Chang, Farshid Sabet Sharghi, Po Yuan, Bahman Qawami: Memory device upgrade. SanDisk Technologies, Brinks Hofer Gilson & Lione, April 23, 2013: US08428649 (1 worldwide citation)

Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then t ...


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Mei Yan, Robert C Chang, Farshid Sabet Sharghi, Po Yuan, Bahman Qawami: Memory device upgrade. SanDisk Technologies, Brinks Gilson & Lione, May 31, 2016: USRE046023

Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then t ...


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Mei Yan, Robert C Chang, Farshid Sabet Sharghi, Po Yuan, Bahman Qawami: Memory device upgrade. BRINKS HOFER GILSON & LIONE SanDisk, February 25, 2010: US20100048169-A1

Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then t ...


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YUAN PO: Memory device upgrade. SANDISK CORPORATION, Genin Kent E, February 25, 2010: WO/2010/021975

Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then t ...


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Yuan Po, Chang Robert C, Sabet sharghi Farshid, Yan Mei, Qawami Bahman: Memory device upgrade. Sandisk, huang xiaolin, September 28, 2011: CN200980141628

Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then t ...


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METHOD OF FABRICATING NON-VOLATILE MEMORY DEVICE ARRAY. November 23, 2017: US20170338237-A1

A method of fabricating nanocrystal memory array includes stacking a silicon layer and a silicon germanium layer on a wafer. A gate oxide layer over is then formed on the silicon layer and the silicon germanium layer. Next, a gate layer is deposited on the gate oxide layer. Subsequently, the gate la ...



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