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Schricker April, Clark Mark, Herner Brad: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same. Sandisk 3d, Schricker April, Clark Mark, Herner Brad, DUGAN Brian M, July 16, 2009: WO/2009/088889 (23 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second ...


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April Schricker, Mark Clark, Brad Herner: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, October 15, 2013: US08558220 (11 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second ...


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April Schricker, Mark Clark, Brad Herner: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, August 7, 2012: US08236623 (3 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the su ...


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Schricker April D: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same. Sandisk 3d, Schricker April D, DUGAN Brian M, November 5, 2009: WO/2009/134603 (3 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube ("CNT") material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the ...


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Schricker April D: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same. Sandisk 3d, Schricker April D, sDUGAN Brian M, October 15, 2009: WO/2009/126876 (3 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible- resistance switching element coupled to the steering element by fabricating a carbon nano- tube ("CNT") seeding layer by depositing a silic ...


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Clark Mark, Herner Brad, Schricker April: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same. Sandisk 3d, Clark Mark, Herner Brad, Schricker April, PINSKY Douglas W, July 16, 2009: WO/2009/088888 (2 worldwide citation)

In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a steering element above a substrate; and (2) fabricating a reversible-resistance switching element coupled to the steering element by selectively fabricating carbon nano-tube (CNT) material above the su ...


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April D Schricker: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, September 10, 2013: US08530318

In some aspects, a method of fabricating a memory cell is provided that includes: (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (“CNT”) material above the first conductor by: (a) fabricating a CNT seeding layer on the first conductor, wherein the ...


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April D Schricker: Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same. SanDisk 3D, Dugan & Dugan PC, November 6, 2012: US08304284

In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (“CNT”) seeding layer by depositing a silicon ...


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