1
Jang F Chen, James A Matthews: Mask for photolithography. MicroUnity Systems Engineering, September 7, 1993: US05242770 (288 worldwide citation)

An improvement for reducing proximity effects comprised of additional lines, referred to as intensity leveling bars, into the mask pattern. The leveling bars perform the function of adjusting the edge intensity gradients of isolated edges in the mask pattern, to match the edge intensity gradients of ...


2
Richard A Ferguson, Lars W Liebmann, Scott M Mansfield, David S O Grady, Alfred K Wong: Exact transmission balanced alternating phase-shifting mask for photolithography. International Business Machines Corporation, H Daniel Schnurmann, August 3, 1999: US05932377 (50 worldwide citation)

A two-step method for eliminating transmission errors in alternating phase-shifting masks is described. Initially, the design data is selectively biased to provide a coarse reduction in the inherent transmission error between features of different phase, size, shape, and/or location. During fabricat ...


3
Charles R Scott, Patrick M Troccolo: Photolithography mask and method of fabrication. Intel Corporation, Naomi Obinata, August 10, 1999: US05935733 (32 worldwide citation)

A novel mask for photolithography in semiconductor processing and fabrication method is disclosed. The mask includes a layer of transmissive material transparent to the wavelength of light to be used deposited thereon. The transmissive material is plasma etched in accordance with a pattern in photor ...


4
Pei Yang Yan, Guojing Zhang: Method of protecting an EUV mask from damage and contamination. Intel Corporation, Naomi Obinata, July 27, 1999: US05928817 (26 worldwide citation)

A novel mask for photolithography in semiconductor processing and the mask fabrication method is disclosed. The mask includes a substrate, a patterned buffer layer, a patterned absorber layer above the patterned buffer layer, and a protective cap. The substrate preferably contains a multilayer reson ...


5
Dong Kyu Kim, Jung Hee Lee: Exposing methods in photolithography used for manufacturing a liquid crystal display. Samsung Electronics, Myers Bigel Sibley & Sajovec, August 31, 1999: US05945256 (16 worldwide citation)

A substrate for a microelectronic device is divided into at least two regions and a boundary region therebetween. The boundary region includes a first portion and a second portion. The boundary region may have subregions having equal area, and the sub-regions are arranged in a matrix shape to form t ...


6
Jason Michael Neidrich: System and method for varying exposure time for different parts of a field of view while acquiring an image. Texas Instruments Incorporated, Charles A Brill, Wade James Brady III, Frederick J Telecky Jr, January 2, 2007: US07158180 (14 worldwide citation)

A system and method for exposing different parts of a single field of view for various and differing lengths of time while capturing an image is provided. For astrophotography, unwanted light pollution or over-saturation bleeding from nearby or obtrusive stars may be greatly reduced or eliminated wh ...


7
Yoshikawa Chikanori, Sakamoto Michiaki: Liquid crystal display device and its production. NEC, May 26, 2000: JP2000-147493 (14 worldwide citation)

PROBLEM TO BE SOLVED: To produce a reflection type liquid crystal display device in the same production process as a transmission type liquid crystal display device. SOLUTION: A mask for photolithography capable of forming both a gate electrode 22 and a reflecting plate 23 and a mask for photolithog ...


8
Katsuji Iguchi, Takashi Fukushima, Hiroki Tabuchi: Mask for photolithography. Sharp Kabushiki Kaisha, Nixon & Vanderhye, February 14, 1995: US05389474 (13 worldwide citation)

A mask for photolithography having a transparent substrate which allows light having a predetermined wavelength to pass therethrough; an opaque pattern provided on said substrate for inhibiting the light from passing therethrough; and a stepped portion provided adjacent to said opaque pattern on sai ...


9
Benjamin Szu Min Lin: Phase-shifting mask for photolithography in semiconductor fabrications. United Microelectronics, January 4, 2000: US06010807 (13 worldwide citation)

A phase-shifting mask (PSM) is provided for use in a photolithographic process in semiconductor fabrications. The phase-shifting mask includes a quartz plate and a plurality of mask pieces located at predefined locations over said quartz plate. Each of said mask pieces includes a semi-transparent ma ...


10
Patrick M Troccolo: Photolithography mask and method of fabrication. Intel Corporation, Naomi Obinata, August 18, 1998: US05795684 (10 worldwide citation)

A novel mask for photolithography in semiconductor processing and fabrication method is disclosed. The mask includes a layer of transmissive material transparent to the wavelength of light to be used deposited thereon. The transmissive material is plasma etched in accordance with a pattern in photor ...