61
Hsin Hung Tu: USB connector structure with protection means. AIPTEK International, Troxell Law Office PLLC, October 26, 2004: US06808400 (76 worldwide citation)

The present invention relates to a USB structure with a protection device, especially applying to a USB connector structure without traditional cap but still with protection function. The present invention adopts simple mechanism, spring and positioning structure, pivotal structure and rotational st ...


62
Timothy J Brosnihan, Nesbitt W Hagood IV, Jasper Lodewyk Steyn, Jignesh Gandhi, John J Fijol, Richard S Payne, Roger Barton: Display apparatus and methods for manufacture thereof. Pixtronix, Ropes & Gray, July 29, 2008: US07405852 (75 worldwide citation)

Display devices incorporating shutter-based light modulators are disclosed along with methods of manufacturing such devices. The methods are compatible with thin-film manufacturing processes known in the art and result in displays having lower power-consumption.


63
Tapesh Yadav, Ming Au, Bijan Miremadi, John Freim, Yuval Avniel, Roger Dirstine, John Alexander, Evan Franke: Applications and devices based on nanostructured non-stoichiometric substances. NanoProducts Corporation, Stuart Langley, Hogan & Hartson, August 19, 2003: US06607821 (75 worldwide citation)

Nanostructured non-equilibrium, non-stoichiometric materials and device made using the nanonostructured non-equilibrium non-stoichiometric materials are provided. Applications and methods of implementing such devices and applications are also provided. More specifically, the specifications teach the ...


64
Paul P Mehta, Jerry William Evans, Arthur L Ludwig, Rahul Chhabra: Method and system for estimating manufacturing costs. American Technology & Services, Dinsmore & Shohl, November 6, 2007: US07292965 (74 worldwide citation)

A method and system estimates manufacturing costs for conventional and advanced materials and processes based on process-oriented approach. A computer system input display for selecting one or more designs and one or more design parameters. Cost models are based upon process-oriented manufacturing c ...


65
Satwinder Malhi, Taylor R Efland, Oh Kyong Kwon: Triple diffused lateral resurf insulated gate field effect transistor compatible with process and method. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, September 13, 1994: US05346835 (72 worldwide citation)

A triple-diffused lateral RESURF transistor (55,57) uses a threshold voltage adjust implant (52, 54) in conjunction with a thinner gate oxide (64) to yield a device which is more compatible with CMOS VLSI manufacturing processes and which delivers better performance characteristics than more convent ...


66
Sammy Mok, Fu Chiung Chong: Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies. NanoNexus, Michael A Glenn, Glenn Patent Group, November 9, 2004: US06815961 (70 worldwide citation)

Several embodiments of integrated circuit probe card assemblies are disclosed, which extend the mechanical compliance of both MEMS and thin-film fabricated probes, such that these types of spring probe structures can be used to test one or more integrated circuits on a semiconductor wafer. Several e ...


67
Masaaki Asano, Yoshiaki Tsuruoka, Hisao Tanabe: Plasma display device with auxiliary partition walls, corrugated, tiered and pigmented walls. Dai Nippon Printing, Morgan & Finnegan, December 28, 1999: US06008582 (69 worldwide citation)

A plasma display panel has a front plate (10) and a back plate (3) disposed in parallel and opposite to each other, and spaced a predetermined distance apart from each other by partition walls (1a, 1b, 1c). The partition walls (1a, 1b, 1c) define discharge spaces (2) each having a plurality of disch ...


68
Rong Chang Liang, Jerry Chung, David Chen: Electrophoretic display with dual mode switching. SiPix Imaging, Howrey, May 16, 2006: US07046228 (65 worldwide citation)

The present invention relates to an improved EPD which comprises both the traditional up/down switching and the in-plane switching modes. In other words, the improved EPD has dual switching modes. The monochrome EPDs of the present invention are capable of displaying highlight color of choice which ...


69
Ming Yin Hao, Robert Bertram Ogle Jr, Derick Wristers: Process for reliable ultrathin oxynitride formation. Advanced Micro Devices, Gerald Fisher, Deborah Wenocur, June 12, 2001: US06245689 (65 worldwide citation)

A process for growing an ultra-thin dielelctric layer for use as a MOSFET gate or a tunnel oxide for EEPROM's is described. A silicon oxynitride layer, with peaks in nitrogen concentration at the wafer-oxynitride interface and at the oxynitride surface and with low nitrogen concentration in the ...


70
Steven J Hultquist, Glenn M Tom, Peter S Kirlin, James V McManus: Sorbent-based gas storage and delivery system for dispensing of high-purity gas, and apparatus and process for manufacturing semiconductor devices, products and precursor structures utilizing same. Advanced Technology Materials, Steven J Hultquist, Oliver A M Zitzmann, October 17, 2000: US06132492 (64 worldwide citation)

A sorbent-based gas storage and dispensing system, including a storage and dispensing vessel containing a solid-phase physical sorbent medium having a sorbate gas physically adsorbed thereon. A chemisorbent material is provided in the vessel to chemisorb the impurities for gas phase removal thereof ...



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