11
David A Redford: In situ gasification of solid hydrocarbon materials in a subterranean formation. Texaco Exploration Canada, Thomas H Whaley, Carl G Ries, Jack H Park, May 31, 1977: US04026357 (245 worldwide citation)

Solid hydrocarbon materials present in subsurface earth formation such as, for example, the coke like residue remaining in a subterranean tar sand deposit which has previously been exploited by controlled oxidation depletion, is converted to a synthesis gas composition by contacting the solid hydroc ...


12
Taber H Smith, Vikas Mehrotra, David White: Dummy fill for integrated circuits. Praesagus, Fish & Richardson P C, December 19, 2006: US07152215 (233 worldwide citation)

A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use p ...


13
Raj K Agrawal, Niall R Lynam, James K Galer: Interior rear view mirror mounting system utilizing one-package structural adhesive. Donnelly Corporation, Price Heneveld Cooper DeWitt & Litton, December 24, 1996: US05587236 (227 worldwide citation)

The present invention comprises a vehicle accessory mounting button, windshield arrangement and a method for making the same which uses nonelastomeric, thermosetting, structural adhesives, preferably in film form, to adhere the accessory mounting button to the interior surface of a windshield. The a ...


14
Costandi A Audeh, Robert D Offenhauer: In-situ gasification of tar sands utilizing a combustible gas. Mobil Oil Corporation, Alexander J McKillop, Michael G Gilman, Charles A Malone, March 4, 1986: US04573530 (226 worldwide citation)

A subterranean, viscous oil-containing formation, e.g. tar sands, which has previously been exploited by an in-situ combustion operation to recover the maximum amount of oil therefrom and leaving a solid coke like residue in the formation, is first saturated with a combustible gas such as methane, e ...


15
Tsu Jae King, Victor Moroz: Integrated circuit on corrugated substrate. Synopsys, Bever Hoffman & Harms, Jeanette S Harms, March 13, 2007: US07190050 (223 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


16
Tsutae Shinoda, Noriyuki Awaji, Shinji Kanagu, Tatsutoshi Kanae, Masayuki Wakitani, Toshiyuki Nanto, Mamaru Miyahara: Full color surface discharge type plasma display device. Fujitsu, Staas & Halsey, October 7, 1997: US05674553 (222 worldwide citation)

A full color three electrode surface discharge type plasma display device that has fine image elements and is large and has a bright display. The three primary color luminescent areas are arranged in the extending direction of the display electrode pairs in a successive manner and an image element i ...


17
Tsu Jae King, Victor Moroz: Integrated circuit on corrugated substrate. Synopsys, Bever Hoffman & Harms, Jeanette S Harms, May 5, 2009: US07528465 (209 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


18
Tsu Jae King Liu, Qiang Lu: Enhanced segmented channel MOS transistor with narrowed base regions. Synopsys, Silicon Valley Patent Group, Edward S Mao, March 24, 2009: US07508031 (205 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably produced ...


19
Tsu Jae King, Victor Moroz: Method of IC production using corrugated substrate. Synopsys, Bever Hoffman & Harms, Jeanette S Harms, September 4, 2007: US07265008 (201 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


20
Tsu Jae King Liu, Qiang Lu: Enhanced segmented channel MOS transistor with high-permittivity dielectric isolation material. Synopsys, Silicon Valley Patent Group, Edward S Mao, October 20, 2009: US07605449 (200 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...



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