1
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer Jr, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitman Curtis Christofferson & Cook PC, Joseph P Abate, March 3, 2009: US07497959 (4 worldwide citation)

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


2
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Thimothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. Whitham Curtis & Christofferson PC, October 23, 2008: US20080261128-A1

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


3
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitham Curtis & Christofferson PC, November 17, 2005: US20050255386-A1

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


4
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


5
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, September 30, 2008: US07429637

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


6
Tsu Jae King, Victor Moroz: Segmented channel MOS transistor. Synopsys, Bever Hoffman & Harms, Jeanette S Harms, July 24, 2007: US07247887 (314 worldwide citation)

By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repe ...


7
James V Donadio III, David R Holmes, Robert S Schwartz, David Berry: Flexible tubular device for use in medical applications. Cardia Catheter Company, Merchant Gould Smith Edell Welter & Schmidt P A, April 21, 1998: US05741429 (280 worldwide citation)

Manufacturing processes for apparatus, including slotted hypotube, for use as a catheter, a guidewire, a catheter sheath for use with catheter introducers or a drug infusion catheter/guidewire are disclosed. The manufacturing process includes creating a pattern of slots or apertures in a flexible me ...


8
Tsutae Shinoda, Noriyuki Awaji, Shinji Kanagu, Tatsutoshi Kanae, Masayuki Wakitani, Toshiyuki Nanto, Mamaru Miyahara: Full color surface discharge type plasma display device. Fujitsu, Staas & Halsey, August 26, 1997: US05661500 (270 worldwide citation)

A full color three electrode surface discharge type plasma display device that has fine image elements and is large and has a bright display. The three primary color luminescent areas are arranged in the extending direction of the display electrode pairs in a successive manner and an image element i ...


9
Taber H Smith, Vikas Mehrotra, David White: Characterization and reduction of variation for integrated circuits. Cadence Design Systems, Bingham McCutchen, June 3, 2008: US07383521 (267 worldwide citation)

A method and system are described to reduce process variation as a result of the semiconductor processing of films in integrated circuit manufacturing processes. The described methods use process variation and electrical impact to modify the design and manufacture of integrated circuits.


10
Taber H Smith, Vikas Mehrotra, David White: Dummy fill for integrated circuits. Praesagus, Bingham McCutchen, October 17, 2006: US07124386 (250 worldwide citation)

A method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes. The described methods use p ...



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