41
Eb Eshun
Ebenezer E Eshun: Thin-film resistor and method of manufacturing the same. International Business Machines Corporation, Anthony J Canale, December 5, 2006: US07145218 (4 worldwide citation)

The invention relates to integration of a thin-film resistor in a wiring level, such as, for example, an aluminum back-end-of-line (BEOL) technology. The thin-film resistor is formed in a wiring level on, for example, an upper surface of a dielectric layer. The thin-film resistor includes end portio ...


42
Erwin Meinders
Meinders Erwin R, de Loynes de, Fumichon Julien J X: Method of manufacturing a stamper for replicating a high density relief structure. Moser Baer India, Meinders Erwin R, de Loynes de, Fumichon Julien J X, VAVLKONET Rutger, March 8, 2007: WO/2007/026294 (4 worldwide citation)

The present invention relates to a method of manufacturing a stamper for replicating a high density relief structure, the method comprising the steps of: providing a master substrate (10) comprising a substrate layer (12) and a recording stack overlying the substrate layer, the recording stack compr ...


43
Erwin Meinders
Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R: Electric device comprising a layer of phase change material and method of manufacturing the same. Koninklijke Philips Electronics, Lankhorst Martijn H R, Widdershoven Franciscus P, Wolters Robertus A M, Ketelaars Wilhelmus S M M, Meinders Erwin R, DUIJVESTIJN Adrianus J, July 8, 2004: WO/2004/057618 (4 worldwide citation)

The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistan ...


44
Ivo Koutsaroff 掘露 伊保龍
KADOTA Michio, KOUTSAROFF Ivoyl P, HIRANO Hideki, TANAKA Shuji, ESASHI Masayoshi, HASHIMOTO Kenya: チューナブルフィルタ及びその製造方法, FILTRE ACCORDABLE ET SON PROCÉDÉ DE FABRICATION, TUNABLE FILTER AND METHOD FOR MANUFACTURING SAME. Murata Manufacturing, TOHOKU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY, KADOTA Michio, KOUTSAROFF Ivoyl P, HIRANO Hideki, TANAKA Shuji, ESASHI Masayoshi, HASHIMOTO Kenya, MIYAZAKI & METSUGI, August 30, 2012: WO/2012/114930 (4 worldwide citation)

A smaller size and simpler manufacturing steps are achieved with a tunable filter obtained using a variable capacitor provided with a dielectric film in which the capacitance is varied by applied voltage. The tunable filter (1) is provided with a piezoelectric substrate (6) made from a piezoelectric ...


45
Ivo Koutsaroff 掘露 伊保龍
Ivoyl P Koutsaroff, Mark Vandermeulen, Andrew Cervin Lawry, Atin J Patel: Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same. Paratek Microwave, Ed Guntin, Guntin Meles & Gust, January 25, 2011: US07875956 (3 worldwide citation)

In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, ...


46
Gerald N Nkwantah
Michael K Gerlach, Gerald N Nkwantah, Jonathan M Mack, Pradnya V Nagarkar, Philip J Ralli: Intrinsic polarizer and method of manufacturing an intrinsic polarizer. Seiko Epson Corporation, Oliff & Berridge, August 11, 2009: US07573637 (3 worldwide citation)

An improved method of forming an intrinsic polarizer, referred to as a K-type polarizer, includes stretching a polymeric film a first stretching step. The polymeric film comprises a hydroxylated linear polymer which is converted after the first stretching step to form dichroic, copolymer polyvinylen ...


47
Ivo Koutsaroff 掘露 伊保龍
Ivoyl Koutsaroff, Shinichi Higai, Akira Ando: Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same. Murata Manufacturing, Keating & Bennett, September 30, 2014: US08848336 (3 worldwide citation)

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-δ)α-(ABO3-δ-γNγ)1-α. A represents a divalent element, B represents a tetravalent elemen ...


48
Belgacem Haba Belgacem (Bel) Haba
Thomas H Distefano, Joseph Fjelstad, Belgacem Haba: Coining tool and process of manufacturing same for making connection components. Tessera, Lerner David Littenberg Krumholz & Mentlik, March 6, 2001: US06196042 (3 worldwide citation)

A tool having a coining projection is operative for forming a frangible portion in a lead of a microelectronic connection component by application of a compressive force. The coining projection is supported on a pedestal formed from a tool body. In an alternative embodiment, the pedestal is formed o ...


49
Jean-luc Dubois
Jean Luc Dubois, Yasuhiro Magatani, Kimito Okumura: Process for manufacturing acrolein or acrylic acid from glycerin. Arkema France, Lynn B Morreale, August 28, 2012: US08252960 (3 worldwide citation)

The subject of the present invention is a process for preparing acrolein by dehydration of glycerin, characterized in that the dehydration is carried out in the presence of a catalyst comprising mainly a compound in which protons in a heteropolyacid are exchanged at least partially with at least one ...


50
Hani Badawi
Weiguo Liu, Morris S Young, M Hani Badawi: Low etch pit density (EPD) semi-insulating GaAs wafers. AXT, DLA Piper, July 28, 2009: US07566641 (3 worldwide citation)

A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.