1
Yiming Huai, Paul P Nguyen, Frank Albert: Three-terminal magnetostatically coupled spin transfer-based MRAM cell. Grandis, Sawyer Law Group, March 7, 2006: US07009877 (167 worldwide citation)

A magnetic memory device for reading and writing a data state comprises at least three terminals including first, second, and third terminals. The magnetic memory device also includes a spin transfer (ST) driven element, disposed between the first terminal and the second terminal, and a readout elem ...


2
Lien Chang Wang, Yiming Huai: Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices. Grandis, Strategic Patent Group P C, June 12, 2007: US07230845 (96 worldwide citation)

A method and system for providing a magnetic memory device are disclosed. The method and system include providing a magnetic element that includes a data storage layer having at least one easy axis in at least a first direction. The method and system also include providing a hard bias structure surr ...


3
Koichiro Inomata, Kentaro Nakajima, Yoshiaki Saito, Masayuki Sagoi, Tatsuya Kishi: Magnetoresistive element and magnetic memory device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, August 26, 2003: US06611405 (88 worldwide citation)

A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer ...


4
Kenneth Kay Smith: Small area magnetic memory devices. Hewlett Packard Development Company, August 24, 2004: US06781910 (87 worldwide citation)

The present disclosure relates to a magnetic memory device. In one embodiment, the magnetic memory device comprises a plurality of memory cells, and a plurality of write conductors adjacent the memory cells but electrically isolated from the memory cells, at least two of the write conductors being c ...


5
Kenneth Kay Smith, Frederick A Perner: Magnetic memory device. Hewlett Packard Development Company, January 24, 2006: US06990012 (83 worldwide citation)

The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second cross-sectional area different from the first cross-sectional area. A magnetic memory cell stack is positioned ...


6
Hideto Hidaka: Thin film magnetic memory device including memory cells having a magnetic tunnel junction. Mitsubishi Denki Kabushiki Kaisha, McDermott Will & Emery, February 19, 2002: US06349054 (76 worldwide citation)

In the data read operation, a memory cell and a dummy memory cell are respectively coupled to two bit lines of a selected bit line pair, and a data read current is supplied thereto. In the selected memory cell column, a read gate drives the respective voltages on a read data bus pair, according to t ...


7
Woosik Kim, Gill Yong Lee: Integration scheme for avoiding plasma damage in MRAM technology. Infineon Technologies, Slater & Matsil L, October 19, 2004: US06806096 (66 worldwide citation)

A method of fabricating a magnetic memory device and a magnetic memory device structure. A buffer insulating layer is deposited over the top surface of the conductive hard mask of a magnetic memory cell. The buffer insulating layer is left remaining over the conductive hard mask top surface while th ...


8
Kentaro Nakajima, Koichiro Inomata, Yoshiaki Saito, Masayuki Sagoi: Magnetic memory device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, October 29, 2002: US06473336 (58 worldwide citation)

A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetizatio ...


9
Allan T Hurst, Jeffrey S Sather, William F Witcraft, Cheisan J Yue: Method of manufacturing a high density magnetic memory device. Honeywell, Kris T Fredrick, April 11, 2000: US06048739 (53 worldwide citation)

A high density magnetic memory device and method of manufacture therefor, wherein the magnetic bit region is provided after selected higher temperature processing steps are performed. Illustrative higher temperature processing steps include those that are performed above for example 400.degree. C., ...


10
Koichiro Inomata, Kentaro Nakajima, Yoshiaki Saito: Magnetic element, magnetic read head, magnetic storage device, magnetic memory device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier Neustadt P C, April 30, 2002: US06381171 (53 worldwide citation)

The present invention provides a spin-dependent tunneling effect element expectable to offer the spin accumulation effect at room temperature while also providing a data storage or “memory” element and magnetic reading head each using the tunnel effect element A first concept of the present inventio ...