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Bruce Dale Ulrich, Tue Nguyen, Masato Kobayashi: Low temperature system and method for CVD copper removal. Sharp Microelectronics Technology, Sharp Kabushiki Kaisha, Gerald Maliszewski, David C Ripma, April 27, 1999: US05897379 (24 worldwide citation)

A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In a ...


2
Ulrich Bruce Dale, Nguyen Tue, Kobayashi Masato: Low temperature system and method for cvd copper removal. Sharp, Sharp Microelect Tech, June 23, 1999: EP0924754-A2 (13 worldwide citation)

In the fabrication of a semiconductor wafer a method for removing copper from the wafer comprises forming a layer of protective coating overlying selected areas on the wafer top surface including copper interconnects. The protective coating is etched to remove it from the edges of the top surface an ...