1
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, May 29, 2007: US07223517 (7 worldwide citation)

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


2
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, February 10, 2005: US20050031964-A1

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


3
Babich Katherina, Mahorowala Arpan P, Medeiros David R, Pfeiffer Dirk: Lithographic antireflective hardmask compositions and uses thereof. Ibm, wang yonggang, March 16, 2005: CN200410058814

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


4
Babich Katherina, Mahorowala Arpan P, Medeiros David R, Pfeiffer Dirk: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, November 21, 2007: TWI290265

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


5
Babich Katherina, Mahorowala Arpan P, Medeiros David R, Pfeiffer Dirk: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, April 16, 2005: TW200513803

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiOi.5}n, wherein n equals 8; and at least one chrom ...


6

7