1
Shunpei Yamazaki, Hongyong Zhang, Hiroaki Ishihara: Laser processing apparatus having beam expander. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, October 19, 1999: US05968383 (46 worldwide citation)

An excimer laser annealing apparatus with an optical system. The optical system includes a cylindrical concave lens (A), a cylindrical convex lens (B), a fly-eye lens (C) made of a cylindrical lens array provided in a lateral direction and a fly eye lens (D) made of a cylindrical lens array provided ...


2
Yun Ho Jung: Laser annealing apparatus. LG Philips, Birch Stewart Kolasch & Birch, February 4, 2003: US06514339 (37 worldwide citation)

A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon subs ...


3
Masumitsu Ino, Toshikazu Maekawa: Laser annealing apparatus. Sony Corporation, Sonnenschein Nath & Rosenthal, July 6, 2004: US06759628 (36 worldwide citation)

A laser annealing apparatus for fabricating a thin film semiconductor device integratedly formed with thin film transistors each of which includes a semiconducting thin film formed on the surface of an insulating substrate spread in longitudinal and lateral directions and then crystallized. A band-s ...


4
Mikio Hongo, Sachio Uto, Mineo Nomoto, Toshihiko Nakata, Mutsuko Hatano, Shinya Yamaguchi, Makoto Ohkura: Laser annealing apparatus, TFT device and annealing method of the same. Hitachi, Antonelli Terry Stout & Kraus, September 13, 2005: US06943086 (35 worldwide citation)

A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary tempo ...


5
Yun Ho Jung: Laser annealing apparatus. LG Philips LCD, Long Aldridge & Norman, January 1, 2002: US06335509 (30 worldwide citation)

The present invention relates to a laser annealing apparatus having a plurality of optical systems to generate a plurality of laser beams. A process time is reduced because a laser scanning operation on a large substrate is completed in a shorter time. The present invention includes a laser oscillat ...


6
Bruce E Adams, Dean Jennings, Abhilash J Mayur, Vijay Parihar, Joseph M Ranish: Thermal flux laser annealing for ion implantation of semiconductor P-N junctions. Applied Materials, Law Office of Robert M Wallace, November 14, 2006: US07135392 (24 worldwide citation)

A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow a ...


7
Tatsuki Okamoto, Tetsuya Ogawa, Yukio Sato, Junichi Nishimae: Laser annealing optical system and laser annealing apparatus using the same. Mitsubishi Denki Kabushiki Kaisha, Leydig Voit & Mayer, April 6, 2004: US06717105 (24 worldwide citation)

A laser optical system includes a linear beam forming member for forming laser beams radiated from laser oscillators into a linear beam shape on a silicon film on a substrate. The laser optical system is arranged so that the optical axes of laser beams from the laser oscillators to the linear beam f ...


8
Yun Ho Jung: Laser annealing apparatus. LG Philips LCD, Long Aldridge & Norman, November 27, 2001: US06323457 (19 worldwide citation)

A laser annealing apparatus has a laser generating section for producing a laser beam, a splitter arranged to partially reflect and partially transmit the laser beam. The apparatus has a first energy converting section for measuring the energy value of the laser beam reflected from the splitter and ...


9
Koichi Tatsuki, Koichi Tsukihara, Naoya Eguchi: Laser annealing apparatus and method of fabricating thin film transistor. Sony Corporation, Robert J Depke, Holland & Knight, August 24, 2004: US06780692 (14 worldwide citation)

In a method of fabricating a thin film transistor through conversion of an amorphous silicon film into a polysilicon film to be an active layer of the thin film transistor by a laser annealing treatment, a laser annealing apparatus comprising a plurality of semiconductor laser devices arranged perfo ...


10
Shunpei Yamazaki, Koichiro Tanaka, Masaaki Hiroki: Laser annealing apparatus and semiconductor device manufacturing method. Semiconductor Energy Laboratory, Nixon Peabody, Jeffrey L Costellia, January 25, 2005: US06847006 (11 worldwide citation)

This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device manufacturing method including a st ...