1
Mark G Harward: Integrated circuit resistor comprising amorphous silicon. Texas Instruments Incorporated, Ira S Matsil, Brian C McCormack, Richard L Donaldson, February 6, 1996: US05489796 (22 worldwide citation)

The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first el ...


2
Mark G Harward: Method for forming an integrated circuit resistor comprising amorphous silicon. Texas Instruments Incorporated, Robby T Holland, James C Kesterson, Pichard L Donaldson, March 2, 1999: US05877059 (6 worldwide citation)

The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first el ...