1
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Technology, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, April 22, 2008: US07361557 (19 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


2
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Technology, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, February 22, 2005: US06858896 (10 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


3
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Technology, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, February 6, 2007: US07172941 (3 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


4
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, April 3, 2012: US08148224 (2 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


5
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, October 2, 2012: US08278708 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


6
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles and Stockbridge P C, February 19, 2013: US08377775 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


7
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, May 1, 2012: US08168498 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


8
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, March 22, 2011: US07910990 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


9
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Electronics Corporation, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, November 30, 2010: US07843001 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...


10
Hiroshi Inagawa, Nobuo Machida, Kentaro Oishi: Insulated gate type semiconductor device and method for fabricating the same. Renesas Technology, Hitachi Tobu Semiconductor, Miles & Stockbridge P C, September 8, 2009: US07585732 (1 worldwide citation)

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is con ...