1
Bikram Kapoor, M Ziaul Karim, Anchuan Wang: Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology. Applied Materials, Townsend and Townsend & Crew, October 26, 2004: US06808748 (150 worldwide citation)

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a hi ...


2
Bikram Kapoor, M Ziaul Karim, Anchuan Wang: Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology. Applied Materials, Townsend and Townsend and Crew, September 29, 2009: US07595088

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a hi ...


3
Bikram Kapoor, Ziaul Karim, Anchuan Fremont: Hydrogen assisted hdp-cvd deposition process for aggressive gap-fill technology. Applied Materials, Applied Materials, Patent Counsel M S 2061, July 29, 2004: US20040146661-A1

Abstract of the Disclosure A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within ...


4
Bikram Kapoor, M Ziaul Karim, Anchuan Wang: Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology. Applied Materials, Patent Counsel M S 2061, Applied Materials, January 13, 2005: US20050008790-A1

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a hi ...