1
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 23, 2003: US06624478 (25 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


2
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Schmeiser Olson & Watts, William D Sabo, November 8, 2005: US06962838 (4 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


3
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. Schmeiser Olsen Watts, December 18, 2003: US20030232467-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


4
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in soi and method for forming. International Business Machines Corporation, Jack P Friedman, Schmeiser Olsen & Watts, July 31, 2003: US20030141548-A1

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...