1
Takashi Mimura: High electron mobility single heterojunction semiconductor devices. Fujitsu, Staas & Halsey, January 3, 1984: US04424525 (125 worldwide citation)

A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. ...


2
Satoshi Hiyamizu, Toshio Fujii: High electron mobility single heterojunction semiconductor devices and methods for production thereof. Fujitsu, Staas & Halsey, January 17, 1989: US04799088 (11 worldwide citation)

A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs laye ...


3
Nishi Hidetoshi, Hiyamizu Satoshi, Okamura Shigeru: High electron mobility single heterojunction semiconductor devices and methods of production of such devices.. Fujitsu, August 4, 1982: EP0056904-A2 (9 worldwide citation)

A high electron mobility semiconductor device has a channel layer (7) and a source layer (8). For example, the source layer (8) contains a sufficient amount of n-type impurity to permit the accumulation of a quasi-two-dimensional electron gas (9) in proximity to a heterojunction (10) of the device f ...


4
Takashi Mimura: High electron mobility single heterojunction semiconductor devices. Fujitsu, Staas & Halsey, May 7, 1991: USRE033584

A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. ...