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MASUDA TAKEYOSHI, WADA KEIJI, ITOH SATOMI, HIYOSHI TORU: [fr] PROCÉDÉ ET APPAREIL POUR FABRIQUER UN DISPOSITIF SEMI-CONDUCTEUR EN CARBURE DE SILICIUM, [de] VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBIDHALBLEITERBAUELEMENTS UND VORRICHTUNG ZUR HERSTELLUNG EINES SILICIUMCARBIDHALBLEITERBAUELEMENTS, [en] METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE. SUMITOMO ELECTRIC, April 24, 2013: EP2584592-A1

[en] A method of manufacturing an SiC semiconductor device includes the steps of forming a first oxide film on a first surface of an SiC semiconductor (S4), removing the first oxide film (S5), and forming a second oxide film constituting the SiC semiconductor device on a second surface exposed as a ...