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Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb & Rahman, Anthony J Canale, November 27, 2007: US07301752 (5 worldwide citation)

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


2
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb I P Law Firm, Anthony Canale, March 31, 2009: US07511940

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


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Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, March 12, 2007: KR1020067025149

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer (102, 106) is formed above a lower conductor layer (100) and an upper conductor layer (104, 108) is formed above the dielectric layer. The invention then forms an etch stop layer (200) ab ...


5
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Feilchenfeld Natalie, Gautsch Michael L, He Zhong Xiang, Moon Matthew D, Ramachandran Vidhya, Waterhouse Barbara: Formation of metal-insulator metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Ibm, June 6, 2007: EP1792343-A2

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


6
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Rahmachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Frederick W Gibb Iii, Gibb & Rahman, January 24, 2008: US20080019077-A1

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


7
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Frederick W Gibb Iii, Gibb Intellectual Property Law Firm, December 8, 2005: US20050272219-A1

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


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