1
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. Sandisk Corporation, Skjerven Morrill, July 30, 2002: US06426893 (388 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


2
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Parsons Hsue & de Runtz, July 6, 2004: US06760255 (52 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


3
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Parsons Hsue & de Runtz, June 17, 2003: US06580638 (35 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


4
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. Sandisk Corporation, Davis Wright Tremaine, May 12, 2009: US07532511 (17 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


5
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Parsons Hsue & de Runtz, February 27, 2007: US07184306 (16 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


6
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Parsons Hsue & de Runtz, February 7, 2006: US06996008 (13 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


7
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. Sandisk Corporation, Davis Wright Tremaine, April 22, 2008: US07362613 (11 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


8
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Davis Wright Tremaine, August 6, 2013: US08503240 (1 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These chara ...


9
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Davis Wright Tremaine, July 17, 2012: US08223547 (1 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...


10
Kevin M Conley, John S Mangan, Jeffrey G Craig: Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks. SanDisk Corporation, Davis Wright Tremaine, January 12, 2010: US07646667 (1 worldwide citation)

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in ...