1
Huaxiang Yin, Mieno Fumitake: Fin field-effect transistors and fabrication method thereof. Semiconductor Manufacturing International, Anova Law Group PLLC, August 19, 2014: US08809173 (13 worldwide citation)

A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall ...


2
Yunchu Yu, Yihua Shen, Xiaohui Zhuang: Fin field effect transistors and fabrication method thereof. SEMICONDUCTOR MANUFACTURING INTERNATIONAL, SEMICONDUCTOR MANUFACTURING INTERNATIONAL, Anova Law Group PLLC, September 22, 2015: US09142675 (1 worldwide citation)

A method is provided for fabricating a fin field-effect transistor. The method includes providing a substrate having a first region and a second region; and forming a plurality of fin structures on a surface of the substrate. The method also includes forming a first mask layer having a plurality of ...


3
Mieno Fumitake, Huaxiang Yin: Fin field-effect transistors and fabrication method thereof. SEMICONDUCTOR MANUFACTURING INTERNATIONAL, Anova Law Group PLLC, August 25, 2015: US09117906

A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate, and forming a plurality of fins with hard mask layers and an isolation structure. The process also includes forming a first dummy gate layer on the fins and the isolation stru ...


4
Jie Zhao, Yizhi Zeng: Fin field-effect transistors and fabrication method thereof. SEMICONDUCTOR MANUFACTURING INTERNATIONAL, Anova Law Group PLLC, June 14, 2016: US09368497

A method for fabricating fin field-effect transistors includes providing a semiconductor substrate; and forming a plurality of fins on a surface of the semiconductor substrate. The method also includes forming dummy gates formed over side and top surfaces of the fins; forming a precursor material la ...


5
Yong Li, Chengqing Wei: Fin field effect transistors and fabrication method thereof. SEMICONDUCTOR MANUFACTURING INTERNATIONAL, Anova Law Group PLLC, April 4, 2017: US09613960

A method for forming FinFETs includes providing a semiconductor substrate having at least a first fin in a first region and at least a second fin in a second region, and a first gate structure over the first fin and a second gate structure over the second fin; forming a first stress layer on the fir ...


6
FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF. SEMICONDUCTOR MANUFACTURING INTERNATIONAL, July 24, 2014: US20140203369-A1

A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate, and forming a plurality of fins with hard mask layers and an isolation structure. The process also includes forming a first dummy gate layer on the fins and the isolation stru ...


7
FIN FIELD-EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF. August 28, 2014: US20140239355-A1

A method is provided for fabricating a fin field-effect transistor. The method includes providing a semiconductor substrate; and forming a plurality of fins on top of the semiconductor substrate. The method also includes forming isolation structures between adjacent fins; and forming doping sidewall ...


8
FIN FIELD EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF. June 18, 2015: US20150171208-A1

A method is provided for fabricating a fin field-effect transistor. The method includes providing a substrate having a first region and a second region; and forming a plurality of fin structures on a surface of the substrate. The method also includes forming a first mask layer having a plurality of ...


9
FIN FIELD EFFECT TRANSISTORS AND FABRICATION METHOD THEREOF. July 7, 2016: US20160197075-A1

A method for forming FinFETs includes providing a semiconductor substrate having at least a first fin in a first region and at least a second fin in a second region, and a first gate structure over the first fin and a second gate structure over the second fin; forming a first stress layer on the fir ...