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Xavier Baie
Bruce B Doris, Dureseti Chidambarrao, Xavier Baie, Jack A Mandelman, Devendra K Sadana, Dominic J Schepis: Field effect transistor with stressed channel and method for making same. International Business Machines Corporation, Whitham Curtis & Christofferson P C, Jay H Anderson, April 26, 2005: US06884667 (18 worldwide citation)

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET device, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


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Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sadana Devendra K: Field effect transistor with stressed channel and method for making same. International Business Machines Corporation, December 21, 2005: TWI246180

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET devices, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


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