1
Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 6, 2002: US06429481 (180 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


2
Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Babak S Sani, Townsend and Townsend and Crew, March 23, 2004: US06710406 (38 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


3
Brian S Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean E Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 31, 2009: US07511339 (16 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


4
Sze Ki Mo Brian, Chau Duc, Probst Dean Edward, Sapp Steven, Bencuya Izak: Trenched field effect transistor and method of its manufacture. Fairchild Semiconductor, June 16, 1999: EP0923137-A2 (7 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


5
TESSLER NIR: Vertical organic field effect transistor and method of its manufacture. TECHNION RESEARCH AND DEVELOPMENT FOUNDATION, Reinhold Cohn And Partners, October 7, 2010: WO/2010/113163 (5 worldwide citation)

An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (1 ...


6
Nir Tessler, Ariel Ben Sasson: Vertical organic field effect transistor and method of its manufacture. Technion Research and Development Foundation, Oliff, June 24, 2014: US08759830

An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (1 ...


7
SZE KI MO BRIAN, CHAU DUC, PROBST DEAN EDWARD, SAPP STEVEN, BENCUYA IZAK: [fr] Transistor à effet de champ avec tranchée et sa méthode de fabrication, [de] Graben-Feldeffekttransistor und Verfahren zur Herstellung, [en] Trenched field effect transistor and method of its manufacture. FAIRCHILD SEMICONDUCTOR, April 21, 2010: EP2178125-A2

[en] A field effect transistor comprising: a semiconductor substrate having dopants of a first conductivity type a gate-forming trench extending from a surface of the substrate a predetermined depth into the semiconductor substrate a doped well having dopants of a second conductivity type opposite t ...


8
Brian Sze Ki Mo: Field effect transistor and method of its manufacture. Townsend And Townsend And Crew, September 20, 2001: US20010023104-A1

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


9
Mo Brian Sze Ki, Chau Duc, Sapp Steven, Bencuya Izak, Probst Dean Edward: Field effect transistor and method of its manufacture. Fairchild Semiconductor, gujia yun, June 20, 2007: CN200610172830

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


10
Brian Sze Ki Mo, Duc Chau, Steven Sapp: Field effect transistor and method of its manufacture. Fairchild Semiconductor, zhang zhengquan, September 1, 1999: CN98122326

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...