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Xavier Baie
Bruce B Doris, Dureseti Chidambarrao, Xavier Baie, Jack A Mandelman, Devendra K Sadana, Dominic J Schepis: SOI based field effect transistor having a compressive film in undercut area under the channel and a method of making the device. International Business Machines Corporation, Jay H Anderson, Whitham Curtis & Christofferson P C, April 6, 2004: US06717216 (146 worldwide citation)

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET devices, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


2
Xavier Baie
Bruce B Doris, Dureseti Chidambarrao, Xavier Baie, Jack A Mandelman, Devendra K Sadana, Dominic J Schepis: Field effect transistor with stressed channel and method for making same. International Business Machines Corporation, Whitham Curtis & Christofferson P C, Jay H Anderson, April 26, 2005: US06884667 (18 worldwide citation)

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET device, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


3
Eb Eshun
Ebenezer E Eshun, Jeffrey B Johnson, Richard A Phelps, Robert M Rassel, Michael J Zierak: Junction field effect transistor with a hyperabrupt junction. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Richard Kotulak Esq, November 2, 2010: US07825441 (3 worldwide citation)

A junction field effect transistor (JFET) has a hyperabrupt junction layer that functions as a channel of a JFET. The hyperabrupt junction layer is formed by two dopant profiles of opposite types such that one dopant concentration profile has a peak concentration depth at a tail end of the other dop ...


4
Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sadana Devendra K, Schepis Dominic J: (fet) Having stress channel and its manufacturing method. Internatl Business Mach Corp &Lt IBM&Gt, July 8, 2004: JP2004-193596 (2 worldwide citation)

PROBLEM TO BE SOLVED: To provide a field-effect transistor whose charge carrier mobility increases by the stress of an electric current channel 22.SOLUTION: The direction of the stress is that in which a current flows (vertical direction). For a PFET device, the stress is compressive stress, while t ...


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Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sandana Devendra K, Schepis Dominic J: Field effect transistor with improved charge carrier mobility and manufacturing method thereof. International Business Machines Corporation, June 18, 2004: KR1020030086391

PURPOSE: An FET(Field Effect Transistor) and a manufacturing method thereof are provided to improve charge carrier mobility by using a compressive film. CONSTITUTION: An FET includes a channel area(22), an undercut area under the channel area, a gate electrode(28) on the channel area, and a compress ...


7
Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sadana Devendra K: Field effect transistor with stressed channel and method for making same. International Business Machines Corporation, December 21, 2005: TWI246180

Field effect transistor with increased charge carrier mobility due to stress in the current channel 22. The stress is in the direction of current flow (longitudinal). In PFET devices, the stress is compressive; in NFET devices, the stress is tensile. The stress is created by a compressive film 34 in ...


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Marcos Laraia
J Marcos Laraia: Integrated overvoltage and reverse voltage protection circuit. AMI Semiconductor, Workman Nydegger, April 19, 2005: US06882513 (11 worldwide citation)

An integrated overvoltage and reverse voltage protection circuit. The protection circuit includes a field-effect transistor having a source terminal coupled to an input terminal of the protection circuit, and a drain terminal coupled to an output terminal of the protection circuit. A resistor is cou ...