1
Kenji Ishikawa, Mitsuaki Komino, Tadashi Mitui, Teruo Iwata, Izumi Arai, Yoshifumi Tahara: Stage having electrostatic chuck and plasma processing apparatus using same. Tokyo Electron, Tokyo Electron Yamanashi, Oblon Spivak McClelland Maier & Neustadt, January 17, 1995: US05382311 (249 worldwide citation)

A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting ...


2
Tony P Chiang, Karl F Leeser, Jeffrey A Brown, Jason E Babcoke: Adsorption process for atomic layer deposition. Angstron Systems, Brian D Ogonowsky, Patent Law Group, October 7, 2003: US06630201 (208 worldwide citation)

A method for conducting an ALD process to deposit layers on a substrate which includes an electrostatic chuck (ESC) to retain the substrate. Electrode(s) in the chuck assembly are used to induce a voltage on the substrate to promote precursor adsorption on the substrate.


3
Fred C Redeker, Farhad Moghadam, Hiroji Hanawa, Tetsuya Ishikawa, Dan Maydan, Shijian Li, Brian Lue, Robert J Steger, Manus Wong, Yaxin Wong, Ashok K Sinha: Symmetric tunable inductively coupled HDP-CVD reactor. Applied Materials, Thomason Moser & Patterson, January 9, 2001: US06170428 (173 worldwide citation)

The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present i ...


4
Fred C Redeker, Romuald Nowak, Tetsuya Ishikawa, Troy Detrick, Jay Dee Pinson II: Inductively coupled HDP-CVD reactor. Applied Materials, Thomason Moser & Patterson, February 6, 2001: US06182602 (154 worldwide citation)

The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual z ...


5
Dennis S Grimard, Vijay Parkhe, Hyman Levinstein, Fusen Chen, Michael G Chafin: Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same. Applied Materials, Thomason and Moser, May 11, 1999: US05903428 (145 worldwide citation)

A hybrid Johnsen-Rahbek chuck that provides a combination of both Coulombic and Johnsen-Rahbek chucking mechanisms. More specifically, the chuck contains a plurality of dielectric mesas deposited upon particular regions of the support surface of a chuck. The body of the chuck is generally fabricated ...


6
Junichi Arami, Kenji Ishikawa, Youichi Deguchi, Hironori Yagi, Nobuo Kawada, Isao Yanagisawa: Vacuum processing apparatus. Tokyo Electron, Tokyo Electron Tohoku, Graham & James, January 7, 1997: US05591269 (143 worldwide citation)

A vacuum processing apparatus includes: a processing chamber for performing a film formation process to a semiconductor wafer in a vacuum; a mounting member provided in the processing chamber and having a mounting surface for mounting a target object; an electrostatic chuck, provided to the mounting ...


7
Tetsuya Ishikawa, Padmanabhan Krishnaraj, Kaveh Niazi, Hiroji Hanawa: Process kit. Applied Materials, Thomason Moser & Patterson, February 20, 2001: US06189483 (136 worldwide citation)

The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual z ...


8
Kenneth S Collins, Joshua Chin Wing Tsui, Douglas Buchberger: Electrostatic chuck with an impregnated, porous layer that exhibits the Johnson-Rahbeck effect. Applied Materials, Eric Prahl, June 29, 1999: US05916689 (125 worldwide citation)

An electrostatic chuck including a pedestal having a conductive upper surface; and a layer of plasma-sprayed material formed on the upper surface of the pedestal and defining a surface onto which a substrate is placed during use, wherein the plasma-sprayed material exhibits the Johnson-Rahbeck effec ...


9
Hiroji Hanawa, Tetsuya Ishikawa, Manus Wong, Shijian Li, Kaveh Niazi, Kenneth Smyth, Fred C Redeker, Troy Detrick, Jay Dee Pinson II: Multi-zone RF inductively coupled source configuration. Applied Materials, Thomason Moser & Patterson, July 4, 2000: US06083344 (124 worldwide citation)

The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual z ...


10
Akihiro Hosokawa: Method and apparatus for cooling semiconductor wafers. Applied Materials, Michael A Glenn, September 13, 1994: US05345999 (124 worldwide citation)

A semiconductor wafer cooling pedestal has a wafer cooling surface which includes both an electrostatic chuck portion to hold the wafer securely to the pedestal during wafer cooling and a thermal transfer portion to cool the wafer. The entire wafer cooling surface of the pedestal is mirror finished ...



Click the thumbnails below to visualize the patent trend.