61
Erwin Meinders
Hubert Cécile François Martens, Erwin Rinaldo Meinders: Additional data channel in between marks. Koninklijke Philips Electronics, November 11, 2008: US07450485

A device has a head for recording information by writing marks in a track on a record carrier via a beam of radiation. The radiation is controlled to write the marks having a main mark intensity and a mark length within a predefined range of mark lengths. Further, secondary marks are recorded in the ...


62
Erwin Meinders
Hubert Cécile François Martens, Erwin Rinaldo Meinders: Apparatus and method for recording an information on a recordable optical record carrier using oval spot profile. Koninklijke Philips Electronics, May 19, 2009: US07535804

The present invention relates to a method and a corresponding apparatus for recording an information on a recordable optical record carrier (2) by irradiation of a light beam through optical means (3-7) onto said record carrier (2) for forming marks and lands representing said information along an i ...


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64
Ravi Laxman
Nathan Stafford, Christian Dussarrat, Olivier Letessier, Ravi K Laxman: Low decomposition storage of a tantalum precursor. Air Liquide Electronics U S, American Air Liquide, Patricia E McQueeney, January 3, 2012: US08088938

Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is plac ...


65
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, January 24, 2012: US08101788

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


66
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, July 24, 2012: US08227358

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


67

68
David Sherrer
William K Hogen, Carl E Gaebe, James W Getz, David W Sherrer: Optical assemblies and their methods of formation. Rohm and Haas Electronics Materials, Rohm and Haas Electronic Materials, October 9, 2008: US20080247712-A1

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


69
David Sherrer
James W Getz, David W Sherrer, John J Fisher: Electronic device packages and methods of formation. Rohm and Haas Electronic Materials, Jonathan D Baskin, Rohm and Haas Electronic Materials, October 15, 2009: US20090256251-A1

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


70
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics Us, Air Liquide, Intellectual Property, April 3, 2008: US20080081106-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...