61
Erwin Meinders
Hubert Cécile François Martens, Erwin Rinaldo Meinders: Apparatus and method for recording an information on a recordable optical record carrier using oval spot profile. Koninklijke Philips Electronics, May 19, 2009: US07535804

The present invention relates to a method and a corresponding apparatus for recording an information on a recordable optical record carrier (2) by irradiation of a light beam through optical means (3-7) onto said record carrier (2) for forming marks and lands representing said information along an i ...


62

63
Ravi Laxman
Nathan Stafford, Christian Dussarrat, Olivier Letessier, Ravi K Laxman: Low decomposition storage of a tantalum precursor. Air Liquide Electronics U S, American Air Liquide, Patricia E McQueeney, January 3, 2012: US08088938

Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is plac ...


64
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, January 24, 2012: US08101788

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


65
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature CVD of silicon-containing films. Air Liquide Electronics U S, Patricia E McQueeney, July 24, 2012: US08227358

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


66

67
David Sherrer
William K Hogen, Carl E Gaebe, James W Getz, David W Sherrer: Optical assemblies and their methods of formation. Rohm and Haas Electronics Materials, Rohm and Haas Electronic Materials, October 9, 2008: US20080247712-A1

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


68
David Sherrer
James W Getz, David W Sherrer, John J Fisher: Electronic device packages and methods of formation. Rohm and Haas Electronic Materials, Jonathan D Baskin, Rohm and Haas Electronic Materials, October 15, 2009: US20090256251-A1

Provided are electronic device packages and their methods of formation. The electronic device packages include an electronic device mounted on a substrate, a conductive via and a locally thinned region in the substrate. The invention finds application, for example, in the electronics industry for he ...


69
Ravi Laxman
Ziyun Wang, Ashutosh Misra, Ravi Laxman: Silicon precursors and method for low temperature cvd of silicon-containing films. Air Liquide Electronics Us, Air Liquide, Intellectual Property, April 3, 2008: US20080081106-A1

Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an a ...


70
Ravi Laxman
Ravi Laxman: Deposition of silicon germanium nitrogen precursors for strain engineering. Air Liquide Electronics Us, Air Liquide, Intellectual Property, June 19, 2008: US20080145978-A1

Methods for making a semiconductor device are disclosed herein. In general, the disclosed methods utilize compounds containing silicon, nitrogen, and germanium. Furthermore, the methods and compositions described are particularly applicable for formation of layers over gate structures or electrodes, ...



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