1
Rodney L Angle: Electrically alterable, nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, Donald S Cohen, Lawrence P Benjamin, November 22, 1983: US04417264 (28 worldwide citation)

A novel, nonvolatile floating gate memory structure is described wherein the floating gate is substantially shielded from the substrate by the control gate. The control gate is provided with a pair of apertures, through which portions of the floating gate extends. One aperture serves as means for "w ...


2
Alfred C Ipri, Roger G Stewart: Electrically alterable, nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, Donald S Cohen, Lawrence P Benjamin, April 23, 1985: US04513397 (27 worldwide citation)

An electrically alterable, nonvolatile floating gate memory device is described wherein the floating gate is a second level polysilicon layer. The first level polysilicon layer is provided with an aperture in order for only a small portion of the second level polysilicon floating gate to extend thro ...


3
Roger G Stewart, Alfred C Ipri: Dual word line, electrically alterable, nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, William J Burke, Henry Steckler, March 18, 1986: US04577215 (17 worldwide citation)

A structure having dual word line, electrically alterable, nonvolatile floating gate memory cell is described wherein the word-line-to-floating gate capacitance is made significantly greater than either the program-line-to-floating gate capacitance or the floating-gate-to-substrate capacitance. This ...


4
Roger G Stewart, Alfred C Ipri: Electrically alterable, nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, William J Burke, Henry Steckler, October 21, 1986: US04618876 (16 worldwide citation)

A floating gate structure wherein the floating gate is a second level polysilicon layer that is substantially shielded from the substrate by a segmented, discontinuous first level word line. Coupling of the floating gate to the substrate for "writing" is accomplished by extending the floating gate b ...


5
Fontana Gabriella: Electrically alterable, nonvolatile, floating gate memory device.. Sgs Microelettronica, February 24, 1988: EP0256993-A1 (14 worldwide citation)

Disclosed is an electrically alterable, floating gate type, nonvolatile, semiconductor memory device wherein the gate oxide layer (9') in the "injection" area between the silicon (17) (drain region of the device) and the floating gate (19), has an increased thickness in respect of the thickness of t ...


6
Gabriella Fontana: Electrically alterable, nonvolatile floating gate memory device. SGS Microelettronica S p A, Pollock Vande Sande & Priddy, April 18, 1989: US04823175 (12 worldwide citation)

Disclosed is an electrically alterable, floating gate type, nonvolatile, semiconductor memory device wherein the gate oxide layer in the "injection" area between the silicon (drain region of the device) and the floating gate has an increased thickness with respect to the thickness of the same gate o ...


7
Alfred C Ipri, Roger G Stewart: Electrically alterable nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, Donald S Cohen, Lawrence P Benjamin, April 10, 1984: US04442447 (11 worldwide citation)

An electrically alterable, nonvolatile floating gate memory device is described having enhanced write efficiency by reason of an extension of the floating gate member. The extension is made to extend over the drain line of an adjacent memory device and serves to provide the floating gate member with ...


8
Alfred C Ipri, Roger G Stewart: Electrically alterable programmable nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, William J Burke, Henry Steckler, August 26, 1986: US04608591 (10 worldwide citation)

An electrically alterable, nonvolatile floating gate memory device is described wherein the word line and the floating gate are arranged in a parallel relationship with the word line positioned above the floating gate and coincident therewith. A program line is oriented perpendicularly to both the f ...


9
Rodney L Angle: Electrically alterable, nonvolatile floating gate memory device. RCA Corporation, Birgit E Morris, William J Burke, Henry Steckler, December 10, 1985: US04558339 (10 worldwide citation)

A novel, nonvolatile, floating gate memory structure, and a method for its fabrication, is described wherein the floating gate is substantially shielded from the substrate by the program or control gate. The program or control gate is provided with an aperture located over an auxiliary channel regio ...


10
Ipri Alfred Charles, Stewart Roger Green: An electrically alterable, nonvolatile floating gate memory device. RCA, October 5, 1983: GB2117177-A (1 worldwide citation)

An electrically alterable, nonvolatile floating-gate memory device is described wherein the floating gate (18) is a second-level polycrystalline silicon layer (18) and a first-level polycrystalline silicon layer (20) is provided with an aperture (16) in order to allow a small portion of the second-l ...