Akimoto Kengo, Honda Tatsuya, Sone Norihito: Semiconductor device having oxide semiconductor layer and manufacturing method therof. Semiconductor Energy Lab, November 26, 2008: EP1995787-A2 (302 worldwide citation)

The invention provides an active matrix EL display device comprising a thin film transistor formed over a substrate, the thin film transistor including a gate electrode over the substrate; an insulating film over the gate electrode; and an oxide semiconductor film over the gate electrode with the in ...

Eitaro Nishigaki: Organic el display device having an improved image quality. NEC Corporation, Foley & Lardner, June 12, 2001: US06246180 (286 worldwide citation)

A drive unit for driving a corresponding one of organic EL elements of an active matrix EL display device includes a blanking switch for blanking the video signal stored in a storage capacitor in each frame period before the start of the next frame period. A drive transistor drives a corresponding E ...

Miyashita Satoru, Kiguchi Hiroshi, Shimoda Tatsuya, Kanbe Sadao: Method of producing organic el elements, organic el elements and organic el display device. Seiko Epson, November 25, 1998: EP0880303-A1 (214 worldwide citation)

A method of manufacturing an organic EL element according to the present invention comprises the steps of forming pixel electrodes (801), (802), (803) on a transparent substrate (804) and forming on the pixel electrodes by patterning luminescent layers (806), (807), (808) made of an organic compound ...

Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma: Electro-optical device and electronic device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, February 10, 2004: US06689492 (208 worldwide citation)

An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film

Koyama Jun: El display device and electronic device. Semiconductor Energy Lab, January 12, 2001: JP2001-005426 (192 worldwide citation)

PROBLEM TO BE SOLVED: To provide a clear multilevel color displayable EL display device and an electronic device with it.SOLUTION: A current supplied to an EL element 110 is controlled by providing a resistor 109 of a resistance value higher than on-resistance of a current controlling TFT 108 betwee ...


Shunpei Yamazaki: EL display device and electric device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, April 30, 2002: US06380687 (175 worldwide citation)

An electroluminescence display device has a plurality of electroluminescence elements and a driver circuit formed over a substrate. At least a part of the driver circuit is disposed in a display portion of a substrate in order that the size of the display device can be reduced.

Takeshi Nishi, Noriko Ishimaru: EL display device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, July 15, 2003: US06593691 (165 worldwide citation)

An EL display device capable of reducing an average film resistance of an anode in an EL device as well as displaying an image with high definition, and electrical equipment including such an EL display device are provided. A light-shielding metal film (

Naoaki Komiya, Masahiro Okuyama: Electroluminescence display device. Sanyo Electric, Cantor Colburn, September 6, 2005: US06940214 (157 worldwide citation)

An insulator substrate (110) is provided with a display pixel region (200) comprising an electroluminescence element (160) having a cathode (167), emissive layer (166), and anode (161), and with first and second TFTs for driving the element. Surrounding the display pixel region (200), a peripheral d ...

Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, October 8, 2002: US06462722 (153 worldwide citation)

An organic EL display device driven by thin-film transistors is disclosed, wherein for suppressing the deterioration with time of thin-film transistors, at least one of the thin-film transistors, or a second thin-film transistor is formed of a p-channel type thin-film transistor. The p-channel type ...