1
Daniel C Guterman, Gheorghe Samachisa, Yupin K Fong, Eliyahou Harrai: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Caserza, May 17, 1994: US05313421 (580 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


2
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, January 27, 1998: US05712180 (248 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


3
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, March 16, 1999: US05883409 (109 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


4
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Method for forming EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, July 7, 1998: US05776810 (70 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


5
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection with sidewall spacers. SanDisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, December 14, 1999: US06002152 (46 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


6
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Eeprom with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, December 8, 1998: US05847996 (43 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


7
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, June 8, 1999: US05910915 (13 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


8
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, June 8, 1999: US05910925 (12 worldwide citation)

A novel memory structure in which memory arrays are organized in sectors with each sector being formed of a single column or a group of columns having their control gates connected in common. In one embodiment, a high speed shift register is used in place of a row decoder to serially shift in data f ...


9
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Eeprom with split gate source side injection. SanDisk Corporation, Parsons Hsue & de Runtz, March 1, 2005: US06861700 (9 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


10
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection with sidewall spacers. SanDisk Corporation, Parsons Hsue & de Runtz, October 11, 2005: US06954381 (7 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...