1
Sanjay Tiwari: Division operations in memory. Micron Technology, Brooks Cameron & Huebsch PLLC, August 29, 2017: US09747961 (2 worldwide citation)

Examples of the present disclosure provide apparatuses and methods related to performing division operations in memory. An example apparatus might include a first group of memory cells coupled to a first access line and configured to store a dividend element. An example apparatus might include a sec ...


2
Sanjay Tiwari: Signed division in memory. Micron Technology, Brooks Cameron & Huebsch PLLC, March 6, 2018: US09910637

Examples of the present disclosure provide apparatuses and methods for performing signed division operations. An apparatus can include a first group of memory cells coupled to a first access line and a number of sense lines. The apparatus can include a second group of memory cells coupled to a secon ...


3
Sanjay Tiwari, Kyle B Wheeler: Division operations on variable length elements in memory. Micron Technology, Brooks Cameron & Huebsch PLLC, February 20, 2018: US09898253

Examples of the present disclosure provide apparatuses and methods for performing variable bit-length division operations in a memory. An example method comprises performing a variable length division operation on a first vector comprising variable length elements representing a number of dividends ...


4
Sanjay Tiwari: Division operations in memory. Micron Technology, Brooks Cameron & Huebsch PLLC, April 10, 2018: US09940981

Examples of the present disclosure provide apparatuses and methods related to performing division operations in memory. An example apparatus might include a first group of memory cells coupled to a first access line and configured to store a dividend element. An example apparatus might include a sec ...


5
DIVISION OPERATIONS IN MEMORY. March 3, 2016: US20160062673-A1

Examples of the present disclosure provide apparatuses and methods related to performing division operations in memory. An example apparatus might include a first group of memory cells coupled to a first access line and configured to store a dividend element. An example apparatus might include a sec ...


6
SIGNED DIVISION IN MEMORY. September 21, 2017: US20170269903-A1

Examples of the present disclosure provide apparatuses and methods for performing signed division operations. An apparatus can include a first group of memory cells coupled to a first access line and a number of sense lines. The apparatus can include a second group of memory cells coupled to a secon ...


7
SIGNED DIVISION IN MEMORY. November 16, 2017: US20170329577-A1

Examples of the present disclosure provide apparatuses and methods for performing signed division operations. An apparatus can include a first group of memory cells coupled to a sense line and to a number of first access lines. The apparatus can include a second group of memory cells coupled to the ...


8
DIVISION OPERATIONS IN MEMORY. December 14, 2017: US20170358333-A1

Examples of the present disclosure provide apparatuses and methods related to performing division operations in memory. An example apparatus might include a first group of memory cells coupled to a first access line and configured to store a dividend element. An example apparatus might include a sec ...


9
SIGNED DIVISION IN MEMORY. July 19, 2018: US20180203671-A1

Examples of the present disclosure provide apparatuses and methods for performing signed division operations. An apparatus can include a first group of memory cells coupled to a first access line and a number of sense lines. The apparatus can include a second group of memory cells coupled to a secon ...


10
SIGNED DIVISION IN MEMORY. February 7, 2019: US20190042196-A1

Examples of the present disclosure provide apparatuses and methods for performing signed division operations. An apparatus can include a first group of memory cells coupled to a sense line and to a number of first access lines. The apparatus can include a second group of memory cells coupled to the ...