1
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Tru Si Technologies, Haynes and Boone, Michael Shenker, March 31, 2009: US07510928 (28 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


2
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Allvia, Michael Shenker, Haynes and Boone, June 21, 2011: US07964508 (11 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


3
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Invensas Corporation, Haynes and Boone, August 18, 2015: US09111902 (1 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


4
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Invensas Corporation, Haynes and Boone, January 21, 2014: US08633589 (1 worldwide citation)

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


5
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures,and chemical mechanical polishing techniques. Tru Si Technologies, Macpherson Kwok Chen & Heid, November 8, 2007: US20070257367-A1

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


6
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Macpherson Kwok Chen & Heid, January 31, 2008: US20080025009-A1

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


7
Sergey Savastiouk, Valentin Kosenko, James J Roman: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Macpherson Kwok Chen & Heid, December 18, 2008: US20080311749-A1

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


8
Savastiouk Sergey, Kosenko Valentin, Roman James J: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Tru Si Technologies, Savastiouk Sergey, Kosenko Valentin, Roman James J, SHENKER Michael, November 15, 2007: WO/2007/131046

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


9
Savastiouk Sergey, Kosenko Valentin, Roman James J: Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques. Tru Si Technologies, January 29, 2009: KR1020087029677

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...


10
DIELECTRIC TRENCHES, NICKEL/TANTALUM OXIDE STRUCTURES, AND CHEMICAL MECHANICAL POLISHING TECHNIQUES. Invensas Corporation, May 15, 2014: US20140131836-A1

A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer which are used for conductive paths passing through the ele ...