1
Tadahiro Ohmi: Device for plasma process. Baker & Daniels, December 21, 1993: US05272417 (133 worldwide citation)

A plasma process device for a generating a plasma in a container under reduced pressure and for processing an object. First and second electrodes are placed in opposed positions in the container. The electrodes are plate-like in shape. A protective member made of a stable material covers the first e ...


2
Shindo Haruo, Kitagawa Hideo: Method and device for plasma process. Canon, May 30, 2000: JP2000-150479 (2 worldwide citation)

PROBLEM TO BE SOLVED: To suppress static damage to obtain for good electric contact by supplying hydrogen ion group in such state as the negative ion amount of hydrogen is more than the positive ion amount of it to a body to be processed for plasma processing with the inside surface of the groove of ...


3
Shinohara Kibatsu, Umezawa Kazuto: Impedance measuring device for plasma process. Nihon Koshuha, July 14, 2000: JP2000-195698 (1 worldwide citation)

PROBLEM TO BE SOLVED: To optimize the plasma state and to improve the stability of a plasma process by providing a line coupler on a transmission line at the entrance of a chamber, and detecting a traveling wave signal and a reflected wave signal. SOLUTION: A directional coupler made of a coaxial di ...


4
Chen Chung DU, Muh Wang Liang, Guan Yu Lin, Ta Chin Wei: View port device for plasma process and process observation device of plasma apparatus. May 10, 2012: US20120111269-A1

A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The ...


5
Fukiage Noriaki: Method and device for plasma process. Tokyo Electron, January 17, 2008: JP2008-010598

PROBLEM TO BE SOLVED: To provide a method and a device for plasma process for significantly improved throughput.SOLUTION: In the plasma process method, inert gas (Ar gas) and process gas (C5F8 gas) are supplied into a process vessel for processing an object in the presence of plasma. It includes an ...


6
Kaji Tetsunori, Hamazaki Ryoji, Ono Tetsuo, Nawata Makoto: Method and device for plasma process. Hitachi, May 30, 2000: JP2000-150488

PROBLEM TO BE SOLVED: To reduce fluctuation in process characteristics which follows progress of fluorination of process chamber material for preventing drop in plasma process speed by reforming a part contacting a process gas in a plasma process device using a reforming gas. SOLUTION: The state aft ...


7
Omi Tadahiro: System for plasma process. Omi Tadahiro, June 21, 2002: JP2002-176037

PROBLEM TO BE SOLVED: To provide an inexpensive high-performance system for plasma process with which etching and film formation can be carried out without giving any damage nor surface contamination to a substrate and which can be applied to etching and film formation by changing an introduced gas ...


8
Du Chen chung, Liang Muh wang, Lin Guan yu, Wei Ta chin: View port device for plasma process and process observation device of plasma apparatus. Industrial Technology Research Institute, chen xiaowen, May 23, 2012: CN201010582664

A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The ...



Click the thumbnails below to visualize the patent trend.